? semiconductor components industries, llc, 2006 april, 2006 ? rev. 2 1 publication order number: emf18xv6/d emf18xv6t5 dual transistor - power management npn/pnp dual (complementary) features ? low v ce(sat) , 0.5 v ? these are pb ? free devices maximum ratings q1 rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc q2 rating symbol value unit collector ? emitter voltage v ceo ? 60 v collector ? base voltage v cbo ? 50 v emitter ? base voltage v ebo ? 6.0 v collector current ? continuous i c ? 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note1) 4.0 (note 1) mw mw/ c thermal resistance, junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 @ minimum pad. sot ? 563 case 463a plastic (1) (2) q 2 uv = specific device code m = date code = pb ? free package marking diagram device package shipping ? ordering information emf18xv6t5 sot ? 563 (pb ? free) 8000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications q 1 r 2 r 1 (3) (4) (5) (6) http://onsemi.com EMF18XV6T5G sot ? 563 (pb ? free) 8000/tape & reel (note: microdot may be in either location) uv m 1 1 6
emf18xv6t5 http://onsemi.com 2 electrical characteristics (t a = 25 c) (note 2) characteristic symbol min typ max unit q1: npn collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c = 0) i ebo ? ? 0.1 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 80 140 ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 32.9 47 61.1 k resistor ratio r1/r2 0.8 1.0 1.2 q2: pnp collector ? base breakdown voltage (i c = ? 50 adc, i e = 0) v (br)cbo ? 60 ? ? vdc collector ? emitter breakdown voltage (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 50 ? ? vdc emitter ? base breakdown voltage (i e = ? 50 adc, i e = 0) v (br)ebo ? 6.0 ? ? vdc collector ? base cutoff current (v cb = ? 30 vdc, i e = 0) i cbo ? ? ? 0.5 na emitter ? base cutoff current (v eb = ? 5.0 vdc, i b = 0) i ebo ? ? ? 0.5 a collector ? emitter saturation voltage (note 4) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? 0.5 vdc dc current gain (note 4) (v ce = ? 6.0 vdc, i c = ? 1.0 madc) h fe 120 ? 560 ? transition frequency (v ce = ? 12 vdc, i c = ? 2.0 madc, f = 30 mhz) f t ? 140 ? mhz output capacitance (v cb = ? 12 vdc, i e = 0 adc, f = 1.0 mhz) c ob ? 3.5 ? pf 3. device mounted on a fr-4 glass epoxy printed circuit board using the minimum recommended footprint. 4. pulse test: pulse width 300 s, d.c. 2%.
emf18xv6t5 http://onsemi.com 3 typical electrical characteristics ? q1, npn v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 1. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =-25 c 75 c 25 c figure 2. dc current gain figure 3. output capacitance 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 4. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 5. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts ) v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =-25 c t a =-25 c
emf18xv6t5 http://onsemi.com 4 typical electrical characteristics ? q2, pnp figure 6. i c ? v ce v ce , collector voltage (v) figure 7. dc current gain i c , collector current (ma) figure 8. collector saturation region i b , base current (ma) figure 9. on voltage i c , collector current (ma) i c , collector current (ma) 0 120 90 60 30 0 36 9 15 dc current gain 1000 0.1 100 10 1 10 100 t a = 25 c t a = - 25 c t a = 75 c v ce = 10 v v ce , collector\emitter voltage (v) 2 0.01 1.5 1 0.5 0 0.1 1 10 100 t a = 25 c collector voltage (mv) 900 0.2 800 700 600 500 400 300 200 100 0.5 1 5 10 20 40 60 80 100 150 200 t a = 25 c v ce = 5 v 12 0 t a = 25 c 300 a i b = 50 a 100 150 200 250 figure 10. capacitance v cb (v) figure 11. capacitance v eb (v) 13 0 12 11 10 9 6 1234 14 0 c ib , input capacitance (pf) 12 10 8 6 4 0 10 20 30 40 c ob , capacitance (pf) 8 7 2
emf18xv6t5 http://onsemi.com 5 package dimensions sot ? 563, 6 lead case 463a ? 01 issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 emf18xv6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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